DN0150BDJ-7

DN0150BDJ-7概述

Trans GP BJT NPN 50V 0.1A Automotive 6Pin SOT-963 T/R

- 双极 BJT - 阵列 2 NPN(双) 50V 100mA 60MHz 300mW 表面贴装型 SOT-963


得捷:
TRANS 2NPN 50V 0.1A SOT963


艾睿:
If you require a general purpose BJT that can handle high voltages, then the NPN DN0150BDJ-7 BJT, developed by Diodes Zetex, is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


安富利:
Trans GP BJT NPN 50V 0.1A 6-Pin SOT-963 T/R


Chip1Stop:
Trans GP BJT NPN 50V 0.1A 6-Pin SOT-963 T/R


Verical:
Trans GP BJT NPN 50V 0.1A 300mW 6-Pin SOT-963 T/R


Win Source:
TRANS 2NPN 50V 0.1A SOT963


DeviceMart:
TRANSISTOR ARRAY NPN/NPN SOT963


DN0150BDJ-7数据文档
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DN0150BDJ-7

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