FDW2508PB双P沟道-1.8V指定的PowerTrench MOSFET -12V ， -6A ， 18mohm FDW2508PB Dual P-Channel -1.8V Specified PowerTrench MOSFET -12V, -6A, 18mohm
General Description
This P-Channel –1.8V specified MOSFET uses Semiconductor’s advanced low voltage PowerTrench® . It has been optimized for battery power management applications.
Features
Max rDSon= 18mΩat VGS= –4.5V, ID= –6A
Max rDSon= 22mΩat VGS= –2.5V, ID= –5A
Max rDSon= 30mΩat VGS= –1.8V, ID= –4A
Low gate charge
High performance trench technology for extremely low rDSon
Low profile TSSOP-8 package
RoHS compliant
| 型号 | 品牌 | 下载 |
|---|---|---|
| FDW2508PB | Fairchild 飞兆/仙童 | 下载 |
| FDW2510NZ | Fairchild 飞兆/仙童 | 下载 |
| FDW2508P | Fairchild 飞兆/仙童 | 下载 |
| FDW2601NZ | Fairchild 飞兆/仙童 | 下载 |
| FDW256P | Fairchild 飞兆/仙童 | 下载 |
| FDW2520C | Fairchild 飞兆/仙童 | 下载 |
| FDW254P | Fairchild 飞兆/仙童 | 下载 |
| FDW2504P | Fairchild 飞兆/仙童 | 下载 |
| FDW2511NZ | Fairchild 飞兆/仙童 | 下载 |
| FDW2501N | Fairchild 飞兆/仙童 | 下载 |
| FDW2507NZ | Fairchild 飞兆/仙童 | 下载 |