MMBT3906TT1G

ON SEMICONDUCTOR  MMBT3906TT1G  单晶体管 双极, PNP, -40 V, 250 MHz, 200 mW, -200 mA, 30 hFE

通用 NPN ，最大 1A，

### 标准

带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。

欧时:
ON Semiconductor MMBT3906TT1G , PNP 晶体管, 200 mA, Vce=40 V, HFE:30, 100 MHz, 3引脚 SOT-416 SC-75封装

得捷:
TRANS PNP 40V 0.2A SC75 SOT416

立创商城:
MMBT3906TT1G

贸泽:
双极晶体管 - 双极结型晶体管BJT 200mA 40V PNP

e络盟:
Bipolar BJT Single Transistor, PNP, -40 V, 250 MHz, 200 mW, -200 mA, 30 hFE

艾睿:
If your circuit&s;s specifications require a device that can handle high levels of voltage, ON Semiconductor&s;s PNP MMBT3906TT1G general purpose bipolar junction transistor is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.

Allied Electronics:
ON Semi MMBT3906TT1G PNP Bipolar Transistor, 0.2 A, 40 V, 3-Pin SOT-416

安富利:
Trans GP BJT PNP 40V 0.2A 3-Pin SOT-416 T/R

Chip1Stop:
Trans GP BJT PNP 40V 0.2A Automotive 3-Pin SOT-416 T/R

Verical:
Trans GP BJT PNP 40V 0.2A Automotive 3-Pin SOT-416 T/R

Newark:
# ON SEMICONDUCTOR  MMBT3906TT1G  Bipolar BJT Single Transistor, PNP, -40 V, 250 MHz, 200 mW, -200 mA, 300 hFE

Win Source:
TRANS PNP 40V 0.2A SC75-3

DeviceMart:
TRANS PNP GP 40V 200MA SC75-3