射频线控制的“ Q”宽带功率晶体管100W ， 30到500MHz ， 28V The RF Line Controlled “Q” Broadband Power Transistor 100W, 30 to 500MHz, 28V
Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.
• Specified 28 V, 500 MHz characteristics —
Output power = 100 W
Typical gain = 9.5 dB Class AB; 8.5 dB Class C
Efficiency = 55% typ.
• Built–in input impedance matching networks for broadband operation
• Push–pull configuration reduces even numbered harmonics
• Gold metallization system for high reliability
• 100% tested for load mismatch