Trans IGBT Chip N-CH 650V 60A 260000mW 3Pin3+Tab TO-3P Tube
IGBT 沟槽型场截止 650 V 60 A 260 W 通孔 TO-3P
立创商城:
STGWT30HP65FB
得捷:
IGBT TRENCH 650V 60A TO3P
贸泽:
STMicroelectronics Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
艾睿:
Trans IGBT Chip N-CH 650V 60A 260000mW 3-Pin3+Tab TO-3P Tube
Verical:
Trans IGBT Chip N-CH 650V 60A 260000mW 3-Pin3+Tab TO-3P Tube
Win Source:
IGBT TRENCH 650V 60A TO3P / IGBT Trench Field Stop 650 V 60 A 260 W Through Hole TO-3P
型号 | 品牌 | 下载 |
---|---|---|
STGWT30HP65FB | ST Microelectronics 意法半导体 | 下载 |
STGW20H60DF | ST Microelectronics 意法半导体 | 下载 |
STGW35HF60W | ST Microelectronics 意法半导体 | 下载 |
STGWT30H65FB | ST Microelectronics 意法半导体 | 下载 |
STGWT30H60DFB | ST Microelectronics 意法半导体 | 下载 |
STGW19NC60W | ST Microelectronics 意法半导体 | 下载 |
STGWT40H60DLFB | ST Microelectronics 意法半导体 | 下载 |
STGWT40H65DFB | ST Microelectronics 意法半导体 | 下载 |
STGW30H60DFB | ST Microelectronics 意法半导体 | 下载 |
STGWT20H60DF | ST Microelectronics 意法半导体 | 下载 |
STGWT30V60F | ST Microelectronics 意法半导体 | 下载 |