CSD16327Q3

TEXAS INSTRUMENTS  CSD16327Q3  晶体管, MOSFET, N沟道, 60 A, 25 V, 0.0034 ohm, 8 V, 1.2 V

N 通道 NexFET™ 功率 MOSFET，Texas Instruments

得捷:
MOSFET N-CH 25V 60A 8VSON

立创商城:
CSD16327Q3

德州仪器TI:
25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 4.8 mOhm

欧时:
Texas Instruments NexFET 系列 Si N沟道 MOSFET CSD16327Q3, 60 A, Vds=25 V, 8引脚 SON封装

艾睿:
Compared to traditional transistors, CSD16327Q3 power MOSFETs, developed by Texas Instruments, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device is made with nexfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans MOSFET N-CH 25V 21A 8-Pin SON EP T/R

Chip1Stop:
Trans MOSFET N-CH 25V 21A 8-Pin VSON-CLIP EP T/R

Verical:
Trans MOSFET N-CH 25V 21A 8-Pin VSON-CLIP EP T/R

Newark:
# TEXAS INSTRUMENTS  CSD16327Q3  MOSFET Transistor, N Channel, 60 A, 25 V, 0.0034 ohm, 8 V, 1.2 V