FDS6673BZ

FDS6673BZ概述

FAIRCHILD SEMICONDUCTOR  FDS6673BZ  晶体管, MOSFET, P沟道, -14.5 A, -30 V, 0.0065 ohm, -10 V, -1.9 V

The is a P-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. It is well suited for load switching applications common in portable battery packs.

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High performance Trench technology for extremely low RDS ON
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High power and current handling capability
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6.5kV Typical HBM ESD protection level
FDS6673BZ数据文档
型号 品牌 下载
FDS6673BZ

Fairchild 飞兆/仙童

下载
FDS6676AS

Fairchild 飞兆/仙童

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FDS6679

Fairchild 飞兆/仙童

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FDS6679AZ

Fairchild 飞兆/仙童

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FDS6680

Fairchild 飞兆/仙童

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FDS6680AS

Fairchild 飞兆/仙童

下载
FDS6682

Fairchild 飞兆/仙童

下载
FDS6681Z

Fairchild 飞兆/仙童

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FDS6612A

Fairchild 飞兆/仙童

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FDS6690A

Fairchild 飞兆/仙童

下载
FDS6875

Fairchild 飞兆/仙童

下载

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