RENESAS RJH60F4DPQ-A0#T0 单晶体管, IGBT, 60 A, 1.7 V, 235.8 W, 600 V, TO-247, 3 引脚
You won"t need to worry about any lagging in your circuit with this IGBT transistor from Renesas. Its maximum power dissipation is 235800 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| RJH60F4DPQ-A0#T0 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60F7DPQ-A0#T0 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH65D27BDPQ-A0#T0 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60A01RDPD-A0#J2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60A83RDPD-A0#J2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60D1DPP-E0#T2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60D2DPE-00#J3 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60V1BDPE-00#J3 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60A83RDPP-M0#T2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60M1DPE-00#J3 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60A83RDPE-00#J3 | Renesas Electronics 瑞萨电子 | 下载 |