SUM110N03-03P

SUM110N03-03P概述

N沟道30 V(D -S), 175℃下的MOSFET N-Channel 30-V D-S, 175C MOSFET

DESCRIPTION

The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

CHARACTERISTICS

• N-Channel Vertical DMOS

• Macro Model Subcircuit Model

• Level 3 MOS

• Apply for both Linear and Switching Application

• Accurate over the −55 to 125°C Temperature Range

• Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics

SUM110N03-03P数据文档
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