N沟道30 V（D -S）， 175℃下的MOSFET N-Channel 30-V D-S, 175C MOSFET
DESCRIPTION
The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.
CHARACTERISTICS
• N-Channel Vertical DMOS
• Macro Model Subcircuit Model
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics
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