晶体管 双极-射频, NPN, 6.1 V, 20 GHz, 1.5 W, 300 mA, 60 hFE
Description:
The BFQ790 is a single stage driver amplifier with very high linearity. Its output 1dB compression point is 27 dBm. The device is housed in the halogen-free industry standard package SOT89. The high thermal conductivity of silicon substrate and the low thermal resistance of the package add up to a thermal resistance of only 35 K/W, which leads to moderate junction temperatures even at high dissipated power values. The proper die attach with good thermal contact is 100% tested to ensure the thermal properties. The device is based on "s reliable and cost effective NPN SiGe technology running in high volume. The collector design allows safe operation with 5 V supply voltage. The BFQ790 is very rugged. A special collector design prevents from thermal runaway respectively 2nd breakdown, which leads to a high ruggedness against mismatch at the output. The special design of the emitter/base diode makes it robust and yields to a high maximum RF input power capability.
Summary of Features:
型号 | 品牌 | 下载 |
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BFQ790H6327XTSA1 | Infineon 英飞凌 | 下载 |