IRFF9120

INTERNATIONAL RECTIFIER  IRFF9120  场效应管, MOSFET, P沟道, -100V, 4A, TO-205AF

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET® TRANSISTORS THRU-HOLE 100V, P-CHANNEL

The HEXFET® technology is the key to ’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance.

The HEXFET transistors also feature all of the well established advantages of MOSFETs such as volt

age control, very fast switching, ease of parelleling and temperature stability of the electrical parameters.

They are well suited for applications such as switch ing power supplies, motor controls, inverters, chop pers, audio amplifiers and high energy pulse circuits.

Features:

Repetitive Avalanche Ratings

Dynamic dv/dt Rating

Hermetically Sealed

Simple Drive Requirements

Ease of Paralleling