NXP BST82 晶体管, MOSFET, N沟道, 190 mA, 100 V, 10 ohm, 5 V, 2 V
最大源漏极电压Vds Drain-Source Voltage | 100V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage | 20V 最大漏极电流Id Drain Current | 180mA/0.18A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 开启电压Vgs（th） Gate-Source Threshold Voltage | 耗散功率Pd Power Dissipation | 830mW/0.83W Description & Applications | TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package. 描述与应用 | 开关速度非常快 逻辑电平兼容 超小型表面贴装封装
贸泽:
MOSFET
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NXP BST82 晶体管, MOSFET, N沟道, 190 mA, 100 V, 10 ohm, 5 V, 2 V
Win Source:
N-channel enhancement mode vertical D-MOS transistor