Trans IGBT Chip N-CH 600V 10A 25000mW 3Pin3+Tab TO-220FP Tube
Minimize the current at your gate with the IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 25000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| STGF10NC60SD | ST Microelectronics 意法半导体 | 下载 |
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| STGF35HF60W | ST Microelectronics 意法半导体 | 下载 |
| STGFW20V60DF | ST Microelectronics 意法半导体 | 下载 |
| STGF20H60DF | ST Microelectronics 意法半导体 | 下载 |
| STGF20NB60S | ST Microelectronics 意法半导体 | 下载 |
| STGF30H60DF | ST Microelectronics 意法半导体 | 下载 |
| STGFW30V60F | ST Microelectronics 意法半导体 | 下载 |
| STGF19NC60HD | ST Microelectronics 意法半导体 | 下载 |
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