FDC602P

FAIRCHILD SEMICONDUCTOR  FDC602P  晶体管, MOSFET, P沟道, 5.5 A, -20 V, 35 mohm, -4.5 V, -900 mV

最大源漏极电压VdsDrain-Source Voltage| -12V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| -12V 最大漏极电流IdDrain Current| -5.5A 源漏极导通电阻RdsDrain-Source On-State Resistance| 52mΩ@ VGS = -2.5V, ID = -4.4A 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.6~-1.5V 耗散功率PdPower Dissipation| 1.6W Description & Applications| P-Channel 2.5V Specified Power Trench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of ’s advanced Power Trench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V. Applications • DC-DC converters • Load switch • Power management Features • Fast switching speed • High performance trench technology for extremely low RDSON 描述与应用| P沟道2.5V额定功率沟道MOSFET 概述 此P沟道2.5V指定的MOSFET采用了坚固的门版本飞兆半导体的先进功率沟槽过程。它已被优化的电源管理应用广泛的栅极驱动电压（2.5V - 12V）。 应用 •DC-DC转换器 •负荷开关 •电源管理 特点 •开关速度快 •高性能沟道技术极低的RDS（ON）