Trans GP BJT NPN 80V 2A 3Pin SMD-0.5
FEATURES: ? PNP MEDIUM POWER SILICON TRANSISTOR ? Qualified per MIL-PRF-19500/561
贸泽:
Bipolar Transistors - BJT Power BJT
艾睿:
This specially engineered NPN JAN2N5152U3 GP BJT from Microsemi comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor&s;s maximum emitter base voltage is 5.5 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5.5 V.
| 型号 | 品牌 | 下载 |
|---|---|---|
| JAN2N5152U3 | Microsemi 美高森美 | 下载 |
| JAN2N3019 | Microsemi 美高森美 | 下载 |
| JAN2N2329 | Microsemi 美高森美 | 下载 |
| JAN2N2222A | ON Semiconductor 安森美 | 下载 |
| JAN2N2907A | Microsemi 美高森美 | 下载 |
| JAN2N2904A | Microsemi 美高森美 | 下载 |
| JAN2N2219A | Microsemi 美高森美 | 下载 |
| JAN2N3501 | Microsemi 美高森美 | 下载 |
| JAN2N3700 | Microsemi 美高森美 | 下载 |
| JAN2N2905A | ON Semiconductor 安森美 | 下载 |
| JAN2N2906A | Microsemi 美高森美 | 下载 |