AISC-1008-R56G-T

AISC-1008-R56G-T概述

560nH ±2% 编带

* Ceramic or Ferrite Construction assures the utmost in the thermal stablity and high SRF * Exceptionally high Q compared to non-wirewound inductor, especially at high frequencies * Inductance values available from 4.7 nH to 10,000nH


立创商城:
560nH ±2%


得捷:
FIXED IND 560NH 400MA 1.33OHM SM


艾睿:
Inductor RF Wirewound 0.56uH 2% 25MHz 50Q-Factor Ceramic 0.4A 1.33Ohm DCR 1008 T/R


安富利:
Ind Chip Unshielded Wirewound 560nH 2% 25MHz 45Q-Factor Ceramic 400mA 1008 T/R


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