BSC100N10NSFGATMA1

Infineon OptiMOS 2 系列 Si N沟道 MOSFET BSC100N10NSFGATMA1, 90 A, Vds=100 V, 8引脚 TDSON封装

OptiMOS™2 功率 MOSFET 系列

Infineon

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* OptiMOS™2** N 通道系列提供行业最低电压接地电阻。 功率 MOSFET 系列可用于很多应用，包括高频电信、数据通信、太阳能、低电压驱动器和服务器电源。 **OptiMOS 2** 产品系列具有 20V 及以上范围，且提供不同的封装类型可供选择。

得捷:
MOSFET N-CH 100V 11.4/90A 8TDSON

立创商城:
N沟道 100V 11.4A 90A

欧时:
Infineon OptiMOS 2 系列 Si N沟道 MOSFET BSC100N10NSFGATMA1, 90 A, Vds=100 V, 8引脚 TDSON封装

艾睿:
Increase the current or voltage in your circuit with this BSC100N10NSFGATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 156000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 100V 11.4A 8-Pin TDSON T/R

Verical:
Trans MOSFET N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R

Win Source:
MOSFET N-CH 100V 90A TDSON-8