VISHAY SIA416DJ-T1-GE3 晶体管, MOSFET, N沟道, 11.3 A, 100 V, 0.068 ohm, 10 V, 1.6 V
The is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC converter, full-bridge converter, power bricks and POL power applications.
| 型号 | 品牌 | 下载 |
|---|---|---|
| SIA416DJ-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIA413ADJ-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIA459EDJ-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIA427ADJ-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIA427DJ-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIA445EDJ-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIA431DJ-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIA448DJ-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIA429DJT-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIA400EDJ-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIA466EDJ-T1-GE3 | Vishay Semiconductor 威世 | 下载 |