BC847A-TP

BC847A-TP概述

双极晶体管 - 双极结型晶体管BJT 100mA 45V

If you require a general purpose BJT that can handle high voltages, then the NPN BJT, developed by , is for you. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 225 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

BC847A-TP数据文档
型号 品牌 下载
BC847A-TP

Micro Commercial Components 美微科

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BC847CLT1G

ON Semiconductor 安森美

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BC846ALT1G

ON Semiconductor 安森美

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BC846BW

NXP 恩智浦

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BC846BDW1T1G

ON Semiconductor 安森美

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BC846BLT3G

ON Semiconductor 安森美

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BC846BMTF

Fairchild 飞兆/仙童

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BC846S,125

NXP 恩智浦

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BC846BLT1G

ON Semiconductor 安森美

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BC847BS

NXP 恩智浦

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BC846BWT1G

ON Semiconductor 安森美

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