MTB50P03HDL

MTB50P03HDL概述

功率MOSFET 50安培, 30伏特,逻辑电平P沟道D2PAK Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel D2PAK

Power MOSFET

50 Amps, 30 Volts, Logic Level P−Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time.

Features

•Avalanche Energy Specified

•Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

•Diode is Characterized for Use in Bridge Circuits

•IDSSand VDSonSpecified at Elevated Temperature

•Short Heatsink Tab Manufactured − Not Sheared

•Specially Designed Leadframe for Maximum Power Dissipation

•Pb−Free Packages are Available

MTB50P03HDL数据文档
型号 品牌 下载
MTB50P03HDL

ON Semiconductor 安森美

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MTB50N06VT4

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MTB50N06V

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MTB50P03HDLT4G

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MTB50P03HDLG

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MTB50P03HDLT4

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MTB50N06VL

ON Semiconductor 安森美

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