TGF2023-2-01数据手册PDF_TGF2023-2-01中文资料-锐单商城

TGF2023-2-01概述

RF Power Transistor, 0 to 18GHz, 6W, 18dB, 28V, GaN, 0.82 X 0.66 X 0.1mm

The TriQuint is a discrete 1.25 mm GaN on SiCHEMT which operates from DC to 18 GHz. The part is designed using TriQuint"s proven 0.25 um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The device typically provides 38 dBm of saturated output power with power gain of 18 dB at 3 GHz. The maximum power added efficiency is 66% which makes the TGF2023-2-01 appropriate for high efficiency applications. The part is lead-free and RoHS compliant.

.: Frequency range: DC to 18 GHz * 38 dBm nominal Psat at 3 GHz * 66% maximum PAE * 18 dB nominal power gain at 3 GHz * Bias: Vd = 28 -32 V, Idq = 125 mA, Vg = -3.6 V typical * Technology: 0.25 um Power GaN on SiC * Chip dimensions: 0.82 x 0.66 x 0.10 mm

TGF2023-2-01详细参数

TGF2023-2-01数据文档

型号	品牌	下载
TGF2023-2-01	Qorvo	下载
TGF2953	Qorvo	下载
TGF2023-2-10	Qorvo	下载
TGF2977-SM	Qorvo	下载
TGF2080	Qorvo	下载
TGF2952	Qorvo	下载
TGF2022-48	Qorvo	下载
TGF2022-06	Qorvo	下载
TGF2023-2-20	Qorvo	下载
TGF2023-2-02	Qorvo	下载
TGF2022-24	Qorvo	下载