PD20010STR-E

PD20010STR-E概述

Trans RF MOSFET N-CH 40V 5A 3Pin PowerSO-10RF Straight lead T/R

RF Mosfet LDMOS 2GHz 11dB 10W PowerSO-10RF(直引线)


得捷:
TRANS N-CH 40V POWERSO-10RF STR


贸泽:
RF MOSFET Transistors RF power tran LdmoST N-chann


艾睿:
Implement a switching capability into your circuit design with this PD20010STR-E RF amplifier from STMicroelectronics. Its maximum power dissipation is 59000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C.


Chip1Stop:
Trans RF MOSFET N-CH 40V 5A 3-Pin PowerSO-10RF Straight lead T/R


PD20010STR-E数据文档
型号 品牌 下载
PD20010STR-E

ST Microelectronics 意法半导体

下载
PD20010TR-E

ST Microelectronics 意法半导体

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PD20010-E

ST Microelectronics 意法半导体

下载
PD20015-E

ST Microelectronics 意法半导体

下载
PD20015C

ST Microelectronics 意法半导体

下载
PD20010S-E

ST Microelectronics 意法半导体

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PD20015S-E

ST Microelectronics 意法半导体

下载
PD204-6C/L3

Everlight Electronics 亿光

下载
PD204-6B

Everlight Electronics 亿光

下载
PD204-6C

Everlight Electronics 亿光

下载
PD204-6B/L3

Everlight Electronics 亿光

下载

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