FDS6690AS

FAIRCHILD SEMICONDUCTOR  FDS6690AS  晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1.6 V

The is a SyncFET™ N-channel MOSFET produced using PowerTrench® process. It is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC-to-DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS ON and low gate charge. It includes an integrated Schottky diode using "s monolithic SyncFET technology. The performance is as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode.

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High performance Trench technology for extremely low RDS ON

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High power and current handling capability

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16nC Typical low gate charge