双向 33V 5000W
76V Clamp 789A 8/20µs Ipp Tvs Diode Through Hole R-6
得捷:
TVS DIODE 33VWM 76VC R6
立创商城:
双向 Vrwm:33V 5kW
艾睿:
Protect users and systems from overvoltage conditions by equipping your electronic equipment with STMicroelectronics&s; BZW50-33BRL TVS diode. Its maximum leakage current is 5 μA. This device&s;s maximum clamping voltage is 76 V and minimum breakdown voltage is 36.6 V. Its peak pulse power dissipation is 5000 W. Its test current is 1 mA. This TVS diode has a minimum operating temperature of -65 °C and a maximum of 175 °C. This component will be shipped in tape and reel packaging for effective mounting and safe delivery.
安富利:
Diode TVS Single Bi-Dir 33V 5KW 2-Pin Case R-6 Ammo
Chip1Stop:
Diode TVS Single Bi-Dir 33V 5KW 2-Pin Case R-6 Ammo
TME:
Diode: transil; 5kW; 36.6V; 85A; bidirectional; R6
儒卓力:
**TVS-DIODE BI 5KW 39V R6 **
型号 | 品牌 | 下载 |
---|---|---|
BZW50-33BRL | ST Microelectronics 意法半导体 | 下载 |
BZW50-56 | ST Microelectronics 意法半导体 | 下载 |
BZW50-82B | ST Microelectronics 意法半导体 | 下载 |
BZW50-180RL | ST Microelectronics 意法半导体 | 下载 |
BZW50-180 | ST Microelectronics 意法半导体 | 下载 |
BZW50-22 | ST Microelectronics 意法半导体 | 下载 |
BZW50-18 | ST Microelectronics 意法半导体 | 下载 |
BZW50-15B | ST Microelectronics 意法半导体 | 下载 |
BZW50-68B | ST Microelectronics 意法半导体 | 下载 |
BZW50-33B | ST Microelectronics 意法半导体 | 下载 |
BZW50-15RL | ST Microelectronics 意法半导体 | 下载 |