高速PT IGBT High Speed PT IGBT
This IGBT transistor from is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 356000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| APT60GA60JD60 | Microsemi 美高森美 | 下载 |
| APT60GT60JR | Microsemi 美高森美 | 下载 |
| APT60DQ60BG | Microsemi 美高森美 | 下载 |
| APT6M100K | Microsemi 美高森美 | 下载 |
| APT60D60BG | Microsemi 美高森美 | 下载 |
| APT60DQ120BG | Microsemi 美高森美 | 下载 |
| APT60DQ100BG | Microsemi 美高森美 | 下载 |
| APT60D40BG | Microsemi 美高森美 | 下载 |
| APT60D20BG | Microsemi 美高森美 | 下载 |
| APT60D60B | Microsemi 美高森美 | 下载 |
| APT60S20BG | Microsemi 美高森美 | 下载 |