IR7304SPBF

半桥 IGBT MOSFET 灌:60mA 拉:130mA

Summary of Features:

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Drives IGBT/MOSFET power devices

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Gate drive supplies up to 20 V per channel

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Integrated deadtime protection 100ns

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Shoot-through cross-conduction protection

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Undervoltage lockout for VCC for VBS

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3.3 V, 5 V , 15 V input logic compatible

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Output in phase with input

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Tolerant to negative transient voltage

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Designed for use with bootstrap power supplies

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Matched propagation delays