FC116 NPN+NPN复合带阻尼三极管 50V 100mA 50 200mW/0.2W SOT-153/SOT23-5 标记116 开关电路 逆变器 接口电路 驱动电路
集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| 50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| 50V 集电极连续输出电流IC Collector CurrentIC| 100mA Q1基极输入电阻R1 Input ResistanceR1| 10KΩ/Ohm Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 10KΩ/Ohm Q1电阻比R1/R2 Q1 Resistance Ratio| 1 Q2基极输入电阻R1 Input ResistanceR1| 10KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 10KΩ/Ohm Q2电阻比R1/R2 Q2 Resistance Ratio| 1 直流电流增益hFE DC Current GainhFE| 50 截止频率fT Transtion FrequencyfT| 250MHz 耗散功率Pc Power Dissipation| 200mW/0.2W Description & Applications| Features •NPN Epitaxial Planar Silicon Composite Transistor •On-chip bias resistors R1=10kΩ, R2=10kΩ •Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. •The is formed with two chips, being equivalent to the 2SC3398, placed in one package. •Excellent in thermal equilibrium and pair capability. 描述与应用| 特点 •NPN外延平面硅复合晶体管 •片上偏置电阻（R1=10KΩ/Ohm，R2=10KΩ/Ohm） •复合型中包含2个晶体管 CP包装目前在使用，大大提高了安装效率。 •FC116两个芯片组成，相当于2SC3398放置在一个包装。 •优秀的热平衡和对能力