NMOS 512K 64K ×8uV EPROM NMOS 512K 64K x 8uV EPROM
DESCRIPTION
The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure.
■ FAST ACCESS TIME: 200ns
■ EXTENDED TEMPERATURE RANGE
■ SINGLE 5V SUPPLY VOLTAGE
■ LOW STANDBY CURRENT: 40mA max
■ TTL COMPATIBLE DURING READ and PROGRAM
■ FAST PROGRAMMING ALGORITHM
■ ELECTRONIC SIGNATURE
■ PROGRAMMING VOLTAGE: 12V
| 型号 | 品牌 | 下载 |
|---|---|---|
| M27512-2F6 | ST Microelectronics 意法半导体 | 下载 |
| M27500-22SB2T23 | TE Connectivity 泰科 | 下载 |
| M27500-22SD2T23 | TE Connectivity 泰科 | 下载 |
| M27500-20SB2T23 | TE Connectivity 泰科 | 下载 |
| M27500-22SD3T23 | TE Connectivity 泰科 | 下载 |
| M27512F1 | ST Microelectronics 意法半导体 | 下载 |
| M27512-3F1 | ST Microelectronics 意法半导体 | 下载 |
| M27512-2F1 | ST Microelectronics 意法半导体 | 下载 |
| M27512-25F6 | ST Microelectronics 意法半导体 | 下载 |
| M27512 | ST Microelectronics 意法半导体 | 下载 |
| M27500-22ML2T08 | TE Connectivity 泰科 | 下载 |