RENESAS RJH60F6DPQ-A0#T0 单晶体管, IGBT, 85 A, 1.35 V, 297.6 W, 600 V, TO-247, 3 引脚
The IGBT transistor from Renesas will work effectively even with higher currents. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 297600 mW. It is made in a single configuration. This device is made with trench technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
得捷:
IGBT 600V 85A 297.6W TO247A
贸泽:
IGBT 晶体管 IGBT
e络盟:
RENESAS RJH60F6DPQ-A0#T0 单晶体管, IGBT, 85 A, 1.35 V, 297.6 W, 600 V, TO-247, 3 引脚
艾睿:
Trans IGBT Chip N-CH 600V 85A 3-Pin3+Tab TO-247A
DeviceMart:
IGBT 600V 85A 297.6W TO247A
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|---|---|---|
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