RF功率晶体管NPN硅 RF POWER TRANSISTOR NPN SILICON
Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base stationequipment.
Specified 50 V, 30 MHz Characteristics —
Output power = 150 W PEP
Minimum gain = 13 dB
Efficiency = 45%
Intermodulation distortion @ 150 W PEP —
IMD = –32 dB Max
Diffused emitter resistors for superior ruggedness
100% tested for load mismatch at all phase angles with 30:1 VSWR @ 150 W CW
得捷:
TRANS RF NPN 50V 16A 211-11
Verical:
Trans RF BJT NPN 50V 16A 4-Pin Case 211-11