FQB50N06

FQB50N06概述

FAIRCHILD SEMICONDUCTOR  FQB50N06  晶体管, MOSFET, N沟道, 50 A, 60 V, 22 mohm, 10 V, 4 V

The is a QFET® N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.

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100% Avalanche tested
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31nC Typical low gate charge
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65pF Typical low Crss
FQB50N06数据文档
型号 品牌 下载
FQB50N06

Fairchild 飞兆/仙童

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FQB5N50CTM

Fairchild 飞兆/仙童

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FQB50N06LTM

Fairchild 飞兆/仙童

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FQB5N20TM

Fairchild 飞兆/仙童

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FQB50N06TM

Fairchild 飞兆/仙童

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FQB5N60CTM

Fairchild 飞兆/仙童

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FQB5N60TM

Fairchild 飞兆/仙童

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FQB55N10TM

Fairchild 飞兆/仙童

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FQB5N90TM

Fairchild 飞兆/仙童

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FQB5N20LTM

Fairchild 飞兆/仙童

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FQB5N40TM

Fairchild 飞兆/仙童

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