TH58NVG5S0FTA20

SLC NAND Flash 3.3V 32G-bit 4G x 8 48Pin TSOP-I

32 GBIT 4G × 8 BIT CMOS NAND E2PROM

DESCRIPTION

The TH58NVG5S0F is a single 3.3V 32 Gbit 36,305,895,424 bits NAND Electrically Erasable and Programmable Read-Only Memory NAND E2PROM organized as 4096 + 232 bytes × 64 pages × 16384 blocks. The device has two 4328-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4328-byte increments. The Erase operation is implemented in a single block unit 256 Kbytes + 14.5 Kbytes: 4328 bytes × 64 pages.

The TH58NVG5S0F is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

FEATURES

• Organization

   x8

   Memory cell array 4328 × 256K × 8 × 4

   Register 4328 × 8

   Page size 4328 bytes

   Block size 256K + 14.5K bytes

• Modes

   Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,

   Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

• Mode control

   Serial input/output

   Command control

• Number of valid blocks

   Min 16064 blocks

   Max 16384 blocks

• Power supply

   VCC = 2.7V to 3.6V

• Access time

   Cell array to register 30 µs max

   Serial Read Cycle 25 ns min CL=100pF

• Program/Erase time

   Auto Page Program 300 µs/page typ.

   Auto Block Erase 3 ms/block typ.

• Operating current

   Read 25 ns cycle 30 mA max.

   Program avg. 30 mA max

   Erase avg. 30 mA max

   Standby 200 µA max

• Package

   TSOP I 48-P-1220-0.50C

• 4bit ECC for each 512Byte is required.