IXFN200N10P

IXYS SEMICONDUCTOR  IXFN200N10P  晶体管, MOSFET, 极性FET, N沟道, 200 A, 100 V, 7.5 mohm, 15 V, 5 V

底座安装 N 通道 100 V 200A（Tc） 680W（Tc） SOT-227B

欧时:
MOSFET 200A 100V SOT227

得捷:
MOSFET N-CH 100V 200A SOT-227B

e络盟:
晶体管, MOSFET, 极性FET, N沟道, 200 A, 100 V, 0.0075 ohm, 15 V, 5 V

艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the IXFN200N10P power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 680000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with hiperfet technology.

Chip1Stop:
Trans MOSFET N-CH 100V 200A 4-Pin SOT-227B

Verical:
Trans MOSFET N-CH Si 100V 200A 4-Pin SOT-227B

Newark:
# IXYS SEMICONDUCTOR  IXFN200N10P  MOSFET Transistor, PolarFET, N Channel, 200 A, 100 V, 7.5 mohm, 15 V, 5 V

Win Source:
MOSFET N-CH 100V 200A SOT-227B / N-Channel 100 V 200A Tc 680W Tc Chassis Mount SOT-227B