JANTX2N5665

NPN硅功率开关晶体管 NPN POWER SILICON SWITCHING TRANSISTOR

NPN POWER SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/455

贸泽:
双极晶体管 - 双极结型晶体管BJT Power BJT

艾睿:
This NPN JANTX2N5665 general purpose bipolar junction transistor from Microsemi is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 2500 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 6 V.

Verical:
Trans GP BJT NPN 300V 5A 2500mW 3-Pin2+Tab TO-66 Tray