FQD12N20LTM_F085

MOSFET Trans MOS N-Ch 200V 9A 3Pin 2+Tab

General Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control.

Features

• 9.0A, 200V, RDSon = 0.28Ω @VGS = 10 V

• Low gate charge typical 16 nC

• Low Crss typical 17 pF

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• Low level gate drive requirement allowing direct opration from logic drivers

• RoHS Compliant

• Qualified to AEC Q101