FQPF12N60C

N沟道,600V,12A,650mΩ@10V

Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devicesare well suited for high

efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

Features

• 12A, 600V, RDSon= 0.65Ω@VGS= 10 V

• Low gate charge typical 48 nC

• Low Crss typical 21pF

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant