-6A ， -80V和-100V ， 0.600欧姆，P沟道功率MOSFET -6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs
These are P-Channel enhancement mode silicon gate power field effect transistors designed for high speed applications such as switching regulators, switching convertors, relay drivers, and drivers for high power bipolar switching transistors.
Formerly developmental type TA09046.
Features
• -6A, -80V and -100V
• rDSON = 0.600Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”