FQP19N20C

FAIRCHILD SEMICONDUCTOR  FQP19N20C.  晶体管, MOSFET, N沟道, 19 A, 200 V, 140 mohm, 10 V, 4 V

The is a 200V N-channel QFET® MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.

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Low gate charge typical 40.5nC

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Low Crss typical 85pF

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100% Avalanche tested

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±30V Gate to source voltage

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62.5°C/W Thermal resistance, junction to ambient

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0.9°C/W Thermal resistance, junction to case