2N3251 Series 40V 0.2A Through Hole PNP Silicon Transistor - TO-18
If you require a general purpose BJT that can handle high voltages, then the PNP BJT, developed by , is for you. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 360 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.