Trans IGBT Chip N-CH 600V 90A 300000mW 3Pin3+Tab TO-3P Tube
You won"t need to worry about any lagging in your circuit with this IGBT transistor from Renesas. Its maximum power dissipation is 300000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes trench technology. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| RJH60D7DPK-00#T0 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60F7DPQ-A0#T0 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH65D27BDPQ-A0#T0 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60A01RDPD-A0#J2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60A83RDPD-A0#J2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60D1DPP-E0#T2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60D2DPE-00#J3 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60V1BDPE-00#J3 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60A83RDPP-M0#T2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60M1DPE-00#J3 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60A83RDPE-00#J3 | Renesas Electronics 瑞萨电子 | 下载 |