STMICROELECTRONICS STGWA25M120DF3 单晶体管, IGBT, 50 A, 1.85 V, 375 W, 1.2 kV, TO-247, 3 引脚
This IGBT transistor from STMicroelectronics is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 375000 mW. It has a maximum collector emitter voltage of 1200 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration. This device is made with field stop|trench technology.
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