CSD16415Q5

N 通道 NexFET 功率 MOSFET

此 NexFET 功率MOSFET已被设计成在功率转换应用中大大降低功率损失。

顶视图

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超低栅极电荷Qg和栅漏电荷Qgd

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极低接通电阻

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低热阻性

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额定雪崩能量

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无铅端子电镀

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符合 RoHS 标准

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无卤素

得捷:
MOSFET N-CH 25V 100A 8VSON

立创商城:
CSD16415Q5

德州仪器TI:
25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.8 mOhm

欧时:
Texas Instruments NexFET 系列 Si N沟道 MOSFET CSD16415Q5, 100 A, Vds=25 V, 8引脚 SON封装

贸泽:
MOSFET N-Channel NexFET Pwr MOSFET

e络盟:
功率场效应管, MOSFET, N沟道, 25 V, 100 A, 990 µohm, VSON, 表面安装

艾睿:
Increase the current or voltage in your circuit with this CSD16415Q5 power MOSFET from Texas Instruments. Its maximum power dissipation is 3200 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 25V 38A 8-Pin SON T/R

Chip1Stop:
Trans MOSFET N-CH 25V 38A 8-Pin SON T/R

Verical:
Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R

Newark:
# TEXAS INSTRUMENTS  CSD16415Q5  MOSFET Transistor, N Channel, 100 A, 25 V, 0.00099 ohm, 10 V, 1.5 V

Win Source:
MOSFET N-CH 25V 8SON