IXGH48N60C3

IXGH48N60C3概述

600V 48A G-系列 A3 B3 C3 TO-247

IGBT PT 通孔 TO-247AD


得捷:
IGBT 600V 75A 300W TO247AD


艾睿:
Minimize the current at your gate with the IXGH48N60C3 IGBT transistor from Ixys Corporation. Its maximum power dissipation is 300000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


Verical:
Trans IGBT Chip N-CH 600V 75A 300000mW 3-Pin3+Tab TO-247


Win Source:
IGBT 600V 75A 300W TO247AD


IXGH48N60C3数据文档
型号 品牌 下载
IXGH48N60C3

IXYS Semiconductor

下载
IXGH10N100AU1

IXYS Semiconductor

下载
IXGH24N60B

IXYS Semiconductor

下载
IXGH30N60BD1

IXYS Semiconductor

下载
IXGH24N60C

IXYS Semiconductor

下载
IXGH32N60C

IXYS Semiconductor

下载
IXGH32N60CD1

IXYS Semiconductor

下载
IXGH50N60B

IXYS Semiconductor

下载
IXGH32N60B

IXYS Semiconductor

下载
IXGH24N60A

IXYS Semiconductor

下载
IXGH32N60BU1

IXYS Semiconductor

下载

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