Trans GP BJT NPN 20V 3A 1000mW Automotive 3Pin E-Line Box
Bipolar BJT Transistor NPN 20V 3A 150MHz 1W Through Hole E-Line TO-92 compatible
得捷:
TRANS NPN 20V 3A E-LINE
贸泽:
Bipolar Transistors - BJT NPN Super E-Line
艾睿:
Use this versatile NPN ZTX689BSTZ GP BJT from Diodes Zetex to design various electronic circuits. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C.
安富利:
Trans GP BJT NPN 20V 3A 3-Pin E-Line Box
Chip1Stop:
Trans GP BJT NPN 20V 3A 3-Pin E-Line Box
Verical:
Trans GP BJT NPN 20V 3A 1000mW 3-Pin E-Line Box