ON SEMICONDUCTOR BD136G 单晶体管 双极, PNP, -45 V, 1.25 W, -1.5 A, 25 hFE 新
Implement this versatile PNP GP BJT from into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1250 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
| 型号 | 品牌 | 下载 |
|---|---|---|
| BD136G | ON Semiconductor 安森美 | 下载 |
| BD1321G-TR | ROHM Semiconductor 罗姆半导体 | 下载 |
| BD13710S | Fairchild 飞兆/仙童 | 下载 |
| BD13516STU | Fairchild 飞兆/仙童 | 下载 |
| BD139-10 | ST Microelectronics 意法半导体 | 下载 |
| BD13916STU | Fairchild 飞兆/仙童 | 下载 |
| BD13910S | Fairchild 飞兆/仙童 | 下载 |
| BD13616STU | Fairchild 飞兆/仙童 | 下载 |
| BD1376S | Fairchild 飞兆/仙童 | 下载 |
| BD13516S | Fairchild 飞兆/仙童 | 下载 |
| BD13610STU | Fairchild 飞兆/仙童 | 下载 |