BSZ110N06NS3GATMA1

INFINEON  BSZ110N06NS3GATMA1  晶体管, MOSFET, N沟道, 20 A, 60 V, 0.009 ohm, 10 V, 3 V

OptiMOS™3 功率 MOSFET，60 至 80V

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

得捷:
MOSFET N-CH 60V 20A 8TSDSON

立创商城:
N沟道 60V 20A

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSZ110N06NS3GATMA1, 20 A, Vds=60 V, 8引脚 TSDSON封装

e络盟:
晶体管, MOSFET, N沟道, 20 A, 60 V, 0.009 ohm, 10 V, 3 V

艾睿:
Use Infineon Technologies&s; BSZ110N06NS3GATMA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 2100 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 60V 20A 8-Pin TSDSON T/R

Verical:
Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R

Newark:
MOSFET Transistor, N Channel, 20 A, 60 V, 0.009 ohm, 10 V, 3 V