5伏,可变的字节EEPROM 5 Volt, Byte Alterable EEPROM
The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with ’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory
Features
• Access time: 70ns
• Simple byte and page write
- Single 5V supply
- No external high voltages or VP-P control circuits
- Self-timed
- No erase before write
- No complex programming algorithms
- No overerase problem
• Low power CMOS
- Active: 60mA
- Standby: 500µA
• Software data protection
- Protects data against system level inadvertent writes
• High speed page write capability
• Highly reliable Direct Write™ cell
- Endurance: 1,000,000 cycles
- Data retention: 100 years
• Early end of write detection
- DATA polling
- Toggle bit polling
• Pb-free plus anneal available RoHS compliant
型号 | 品牌 | 下载 |
---|---|---|
X28HC256JM-90 | Intersil 英特矽尔 | 下载 |
X28HC64JIZ-90 | Intersil 英特矽尔 | 下载 |
X28HC64J-90 | Intersil 英特矽尔 | 下载 |
X28HC256J-90 | Intersil 英特矽尔 | 下载 |
X28HC64P-12 | Intersil 英特矽尔 | 下载 |
X28HC64JI-12 | Intersil 英特矽尔 | 下载 |
X28HC256J-15T1 | Intersil 英特矽尔 | 下载 |
X28HC256JIZ-15T1 | Intersil 英特矽尔 | 下载 |
X28HC256PZ-12 | Intersil 英特矽尔 | 下载 |
X28HC256JZ-90 | Intersil 英特矽尔 | 下载 |
X28HC256JIZ-90 | Intersil 英特矽尔 | 下载 |