STGB10NB40LZT4

STGB10NB40LZT4概述

N-沟道 440 V 20 A 表面贴装 内部钳位 PowerMESH IGBT - D2PAK

IGBT - 440 V 20 A 150 W 表面贴装型 D2PAK


得捷:
IGBT 440V 20A 150W D2PAK


贸泽:
IGBT Transistors N-Ch Clamped 20 Amp


艾睿:
This STGB10NB40LZT4 IGBT transistor from STMicroelectronics is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 150000 mW. It has a maximum collector emitter voltage of 380 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.


安富利:
Trans IGBT Chip N-CH 380V 20A 3-Pin2+Tab D2PAK T/R


Chip1Stop:
Trans IGBT Chip N-CH 380V 20A Automotive 3-Pin2+Tab D2PAK T/R


Verical:
Trans IGBT Chip N-CH 380V 20A 150000mW Automotive 3-Pin2+Tab D2PAK T/R


DeviceMart:
IGBT N-CHAN 20A CLAMP D2PAK


STGB10NB40LZT4数据文档
型号 品牌 下载
STGB10NB40LZT4

ST Microelectronics 意法半导体

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STGB10NC60KT4

ST Microelectronics 意法半导体

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STGB19NC60KT4

ST Microelectronics 意法半导体

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STGB30NC60WT4

ST Microelectronics 意法半导体

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STGB30NC60KT4

ST Microelectronics 意法半导体

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STGB20NB41LZT4

ST Microelectronics 意法半导体

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STGB40V60F

ST Microelectronics 意法半导体

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STGB19NC60WT4

ST Microelectronics 意法半导体

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STGB20V60DF

ST Microelectronics 意法半导体

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STGB20NB37LZT4

ST Microelectronics 意法半导体

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STGB18N40LZT4

ST Microelectronics 意法半导体

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