BSH103,215

NXP  BSH103,215  晶体管, MOSFET, N沟道, 850 mA, 30 V, 0.4 ohm, 4.5 V, 400 mV

The BSH103 from is a surface mount, N channel enhancement mode MOS transistor in SOT-23 package using TrenchMOS technology. This transistor features very low threshold, high speed switching, no secondary breakdown and direct interface to CMOS, TTL. BSH103 is designed and qualified for use in high frequency applications, glue logic interface between logic blocks or periphery, computing, battery powered applications.

.

Suitable for use with all 5V logic families

.

Suitable for very low gate drive sources

.

Drain to source voltage Vds of 30V

.

Gate to source voltage of ±8V

.

Drain current Id of 850mA

.

Power dissipation Pd of 750mW

.

Operating junction temperature range from -55°C to 150°C