A3T21H360W23SR6

射频金属氧化物半导体场效应RF MOSFET晶体管 Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 56 W Avg., 28 V

Overview

The A3T21H360W23S 56 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz.

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## Features

* Advanced high performance in-package Doherty

* Designed for wide instantaneous bandwidth applications

* Greater negative gate-source voltage range for improved Class C operation

* Able to withstand extremely high output VSWR and broadband operating conditions

* Designed for digital predistortion error correction systems

* RoHS compliant

## Features RF Performance Table

### 2100 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 600 mA, VGSB = 0.6 Vdc, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

*

\---|---|---|---|---

2110 MHz| 16.4| 52.0| 7.7| –29.3

2140 MHz| 16.6| 51.7| 7.6| –30.2

2170 MHz| 16.7| 50.7| 7.3| –30.7

2200 MHz| 16.5| 49.6| 7.2| –31.1